Abstract Due to the low cost and the scaling capability of Si substrate. InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. In this paper. a high-performance 50-nm-gate-length InAlN/GaN HEMT on Si with a high on/off current (I on/I off) ratio of 7. https://parisnaturalfoodes.shop/product-category/deodorant-cream-lavender/